PHP87N03LT

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES ’Trench’ technology Very low on-state resistance Fast switching Low thermal resistance Logic level compatible PHP87N03LT, PHB87N03LT PHD87N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 75 A RDS(ON) ≤ 9.5 mΩ (VGS = 10 V) RDS(ON) ≤ 10.5 mΩ (VGS = 5 V) g s GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. Applications: High frequency computer motherboard d.c. to d.c. converters High current switching The PHP87N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB87N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD87N03LT is supplied in the SOT428 (DPAK)surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION gate drain 1 source SOT78 (TO220AB) tab SOT404 (D2PAK) tab SOT428 (DPAK) tab 2 1 23 2 1 3 1 3 drain LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage (DC) Gate-source voltage (pulse peak value) Drain current (DC) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tj ≤ 150 ˚C Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. ...