Philips Semiconductors
Product specification
PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche e...
Philips Semiconductors
Product specification
PowerMOS
transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated
FEATURES
Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance Fast reverse recovery diode
SYMBOL
d
QUICK REFERENCE DATA VDSS = 500 V ID = 8.5 A
g
RDS(ON) ≤ 0.85 Ω
s
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits. The PHP8ND50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW8ND50E is supplied in the SOT429 (TO247) conventional leaded package. The PHB8ND50E is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION gate drain1 source
SOT78 (TO220AB)
tab
SOT404
tab
SOT429 (TO247)
2
drain
1 23
1
3
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = ...