PHP96NQ03LT

PHP/PHB/PHD96NQ03LT N-channel enhancement mode field-effect transistor Rev. 03 — 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP96NQ03LT in SOT78 (TO-220AB) PHB96NQ03LT in SOT404 (D2-PAK) PHD96NQ03LT in SOT428 (D-PAK). 2. Features s Low gate charge s Low on-state resistance. 3. Applications s Optimized as a control FET in DC to DC converters. 4. Pinning information Table 1: Pinning - SOT78, SOT404, SOT428 simplified outline and symbol Simplified outline mb mb mb Pin Description 1 2 3 mb gate (g) Symbol d drain (d) source (s) mounting base, connected to drain (d) [1] g s MBB076 2 2 1 MBK106 1 3 MBK116 3 MBK091 Top view 1 2 3 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) SOT428 (D-PAK) It is not possible to make connection to pin 2 of the SOT404 and SOT428 packages. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PHP/PHB/PHD96NQ03LT N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C Tj = 25° C; VGS = 10 V; ID = 25 A Tj = 25° C; VGS = 5 V; ID = 25 A Typ 4.2 5.6 Max 25 75 115 175 4.95 7.5 Unit V A W °C mΩ mΩ drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Tab...