PHT6N06T

PHT6N06T TrenchMOS™ standard level FET M3D087 Rev. 02 — 03 February 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s 1 2 3 Top view MSB002 - 1 SOT223 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 IS source (diode forward) current (DC) Tsp = 25 °C ISM peak source (diode forward) current Tsp = 25 ...