PHT6NQ10T

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHT6NQ10T FEATURES ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 6.5 A g RDS(ON) ≤ 90 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications: Motor and relay drivers d.c. to d.c. converters The PHT6NQ10T is supplied in the SOT223 surface mounting package. PINNING PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION SOT223 4 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID ID IDM PD Tj, Tstg CONDITIONS MIN. - 65 MAX. 100 100 ± 20 6.5 3 4.1 1.9 26 8.3 1.8 150 UNIT V V V A A A A A W W ˚C Drain-source voltage Tj = 25 ˚C to 150˚C Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Gate-source voltage Continuous drain current (dc) Tsp = 25 ˚C Tamb = 25 ˚C Continuous drain current (dc) Tsp = 100 ˚C Tamb = 100 ˚C Pulsed drain current Total power dissipation Tsp = 25 ˚C Tamb = 25 ˚C Operating junction and storage temperature THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-amb PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS surface mounted, FR4 board surface mounted, FR4 board TYP. 12 70 MAX. 15 UNIT K/W K/W August 1999 1 Rev 1.000 Philips Semiconductors Product specification N-channel ...