MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP20N35CL/D
Advanced Information
IGBT
SMARTDISCRETES™ ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGP20N35CL/D
Advanced Information
IGBT
SMARTDISCRETES™ Internally Clamped, N-Channel
This Logic Level Insulated Gate Bipolar
Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES ™ monolithic circuitry for usage as an Ignition Coil Driver. Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors Low Saturation Voltage High Pulsed Current Capability
MGP20N35CL
20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED)
®
C
G G Rge C E
E
CASE 221A–06, Style 9 TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 – 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV °C
t 100 ms
IC ICR PD ESD TJ, Tstg
Total Power Dissipation @ TC = 25°C (TO–220) Electrostatic Voltage — Gate–Emitter Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220) Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw RqJC RqJA TL 1.0 62.5 275 10 lbfi...