MGS05N60D

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS05N60D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. Built–In Free Wheeling Diodes Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms Robust High Voltage Termination Robust Turn–Off SOA C ™ Data Sheet MGS05N60D IGBT 0.5 A @ 25°C 600 V E C G G E CASE 029–05 STYLE 35 TO–226AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation Operating and Storage Junction Temperature Range Symbol VCES VCGR VGES IC25 IC90 ICM PD TJ, Tstg Value 600 600 ± 15 0.5 0.3 2.0 1.0 – 55 to 150 Unit Vdc Vdc Vdc Adc Watt °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC RθJA TL 25 125 260 °C/W °C UNCLAMPED DRAIN–TO–SOURCE AVALAN...