MGS13002D

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies. Built–In Free Wheeling Diode Built–In Gate Protection Zener Diode Industry Standard Package (TO92 — 1.0 Watt) High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms Robust High Voltage Termination Robust Turn–Off SOA C ™ Data Sheet MGS13002D POWERLUX IGBT 0.5 A @ 25°C 600 V E C G G E CASE 029–05 TO–226AE TO92 (1.0 WATT) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Symbol VCES VCGR VGES IC25 IC90 ICM PD TJ, Tstg Value 600 600 ± 15 0.5 0.3 2.0 1.0 – 55 to 150 Unit Vdc Vdc Vdc Adc Watt °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – IGBT — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds RθJC RθJA TL 25 125 260 °C/W °C UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Ene...