MGSF3442VT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MGSF3442VT1/D Preliminary Information MGSF3442VT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine ™ Portfolio of devices with energy– conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery– powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.mot–sps.com/ospd N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 58 mΩ (TYP) ™ D D S 1 2 5 6 DRAIN D D G CASE 318G–02, Style 1 TSOP 6 PLASTIC 3 GATE SOURCE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RθJA TL Value 20 ± 8.0 4.0 20 ...