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MGW20N120 Dataheets PDF



Part Number MGW20N120
Manufacturers ON
Logo ON
Description Insulated Gate Bipolar Transistor
Datasheet MGW20N120 DatasheetMGW20N120 Datasheet (PDF)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW20N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at hi.

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