DatasheetsPDF.com

MGW21N60ED Dataheets PDF



Part Number MGW21N60ED
Manufacturers ON
Logo ON
Description Insulated Gate Bipolar Transistor
Datasheet MGW21N60ED DatasheetMGW21N60ED Datasheet (PDF)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capabili.

  MGW21N60ED   MGW21N60ED



Document
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW21N60ED/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high frequencies. Co–packaged IGBTs save space, reduce assembly time and cost. This new E–series introduces an energy efficient, ESD protected, and rugged short circuit device. • Industry Standard TO–247 Package • High Speed: Eoff = 65 mJ/A typical at 125°C • High Voltage Short Circuit Capability – 10 ms minimum at 125°C, 400 V • Low On–Voltage — 2.1 V typical at 20 A, 125°C • Soft Recovery Free Wheeling Diode is included in the Package • Robust High Voltage Termination • ESD Protection Gate–Emitter Zener Diodes C ™ Data Sheet MGW21N60ED IGBT IN TO–247 21 A @ 90°C 31 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE G G C E CASE 340K–01 STYLE 4 TO–247 AE E MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Diode Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RθJC RθJC RθJA TL Value 600 600 ± 20 31 21 42 142 1.14 – 55 to 150 10 0.88 1.4 45 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C ms °C/W °C Designer’s is a trademark of Motorola, Inc. IGBT © Motorola Motorola, Inc. 1997 Device Data 1 MGW21N60ED ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 25 µAdc) Temperature Coefficient (Positive) Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 6.


MGW21N60ED MGW21N60ED MGW30N60


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)