Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGY20N120D/D
™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanc...
