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MGY30N60D Dataheets PDF



Part Number MGY30N60D
Manufacturers Motorola
Logo Motorola
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Datasheet MGY30N60D DatasheetMGY30N60D Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGY30N60D/D ™ Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode Designer's MGY30N60D Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s save space, reduce assembly time and cost. • • • • • • Industry Standard High Power TO–264 Package (TO–3PBL) High Speed Eoff: 60 mJ per Amp typical at 125°C High Short Circuit Capability – 10 ms minimum Soft Recovery Free Wheeling Diode is included in the package Robust High Voltage Termination Robust RBSOA C IGBT & DIODE IN TO–264 30 A @ 90°C 50 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED G G E C E CASE 340G–02, Style 5 TO–264 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Collector–Gate Voltage (RGE = 1.0 MΩ) Gate–Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand Time (VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 Ω) Thermal Resistance — Junction to Case – IGBT — Junction to Case – Diode — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds Mounting Torque, 6–32 or M3 screw (1) Pulse width is limited by maximum junction temperature. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Symbol VCES VCGR VGE IC25 IC90 ICM PD TJ, Tstg tsc RθJC RθJC RθJA TL Value 600 600 ±20 50 30 100 202 1.61 – 55 to 150 10 0.62 1.41 35 260 10 lbfSin (1.13 NSm) Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C ms °C/W °C Preferred devices are Motorola recommended choices for future use and best overall value. TMOS © Motorola Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGY30N60D ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–to–Emitter Breakdown Voltage (VGE = 0 Vdc, IC = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VCE = 600 Vdc, VGE = 0 Vdc) (VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) ON CHARACTERISTICS (1) Collector–to–Emitter On–State Voltage (VGE = 15 Vdc, IC = 15 Adc) (VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C) (VGE = 15 Vdc, IC = 30 Adc) Gate Threshold Voltage (VCE = VGE, IC = 1 mAdc) Threshold Temperature Coefficient (Negative) Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–On Switching Loss Total Switching Loss Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Turn–Off Switching Loss Turn–On Switching Loss Total Switching Loss Gate Charge (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc) DIODE CHARACTERISTICS Diode Forward Voltage Drop (IEC = 15 Adc) (IEC = 15 Adc, TJ = 125°C) (IEC = 30 Adc) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. VFEC — — — 1.30 1.10 1.45 1.80 — 2.05 (continued) Vdc (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 125°C) Energy losses include “tail” (VCC = 360 Vdc, IC = 30 Adc, VGE = 15 Vdc, L = 300 mH RG = 20 Ω, TJ = 25°C) Energy losses include “tail” td(on) tr td(off) tf Eoff Eon Ets td(on) tr td(off) tf Eoff Eon Ets QT Q1 Q2 — — — — — — — — — — — — — — — — — 76 80 348 188 0.98 2.00 2.98 73 95 394 418 1.90 3.10 5.00 150 30 45 — — — — 1.28 — — — — — — — — — — — — nC mJ ns mJ ns (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Cies Coes Cres — — — 4280 225 19 — — — pF VCE(on) — — — VGE(th) 4.0 — gfe — 6.0 10 15 8.0 — — 2.20 2.10 2.60 2.90 — 3.45 Vdc mV/°C Mhos Vdc BVCES 600 — ICES — — IGES — — — — 100 2500 250 nAdc — 870 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit 2 Motorola TMOS Power MOSFET Transistor Device Data MGY30N60D ELECTRICAL CHARACTERISTICS — continued (TJ = 25°C unless otherwise noted) Characteristic DIODE CHARACTERISTICS — continued Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs) Reverse Recovery Stored Charge Reverse Recovery Time (IF = 30 Adc, VR = 360 Vdc, dIF/dt = 200 A/µs, TJ = 125°C) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Emitter Inductance (Measured from the emi.


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