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Channel Photomultipliers and Modules
MH Series CPM Modules
Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply
Description
The Channel Photomultiplier module MH 900 series is designed for an easy to use application for both photoncounting and dc operating modes. It contains an adjustable high voltage supply and a Channel Photomultiplier of the C900 series. The module also offers the possibility to apply an external gate function for time correlated photon counting or active quenching control (only bialkali types). Strong variations in light levels are possible due to the high dynamic range of the installed CPM. The exceptional low noise and high sensitivity facilitates detection of extremely weak light levels.
Features
· High dynamic range · No cooling required · Very high stability in noise level · Adjustable gain · High stability over time · Gateable CPM input for time resolved measurements · Extremely fast high-light recovery times · Rugged and compact design · 5 volts operating voltage · Monitor voltage output
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w w w. p e r k i n e l m e r. c o m / o p t o
Technical Specifications
MH 900 Series 1/3” CPM Module
*) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics
Equivalent Noise Input
1E-14
5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C * for long term operation: max average anode -20 to 50 °C current of <100 nA is recommended approx. 225 g
1E-15
Spectral response
ENI (W)
C 972 C 962 C 952 C 942
1E-17
10 0
1E-16
C 982
Quantumefficiency (%)
C 943 C 944 10 C 983
1E-18
C 911 C 922
100
200
300
400
500
600
700
800
900
Wavelength (nm)
Current Amplification/vs Control Voltage
1,E+09
1
C 9 73
C 9 72
1,E+08
C 962 C 922 C 982 0. 1 10 0 C 9 11 200 300 400 50 0 C 942 600 70 0 800 900
Gain
1,E+07
C 921
C 9 52
1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9
Wavelength (nm )
Control Voltage / V
Technical Specifications
MH 1300 Series 1/2” CPM Module
*) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics
Equi val entN oi se I nput
1 E1 4
5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C * for long term operation: max average anode -20 to 50 °C current of <100 nA is recommended approx. 290 g
Spectral response
ENI (W)
10 0
1 E1 5 C 13 6 2 1 E1 6 C 13 4 2 1 E1 7 C 13 2 2 C 13 11 C 13 8 2 C 13 52
C 13 72
C 13 4 3 C 13 4 4
Quantumefficiency (%)
10 C 13 8 3
1 E1 8 1 00 300 500 700 900
W avel engt h( nm )
C 13 7 3 1 C 13 6 2 C 13 2 2 C 13 2 1 C 13 8 2 0 .1 10 0 200 300 400 500 600 700 800 900 C 13 11 C 13 4 2 C 13 5 2 C 13 7 2
1,E+09 1,E+08 1,E+07
Current Amplification/vs Control Voltage
Gain
1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9
Wavelength (nm )
Control Voltage / V
Technical Specifications
MH 1900 Series 3/4” CPM Module
*) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics
Equivalent Noise Input 1E-14
5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C -20 to 50 °C * for long term operation: max average anode approx. 370 g current of <100 nA is recommended
Spectral response
10 0
1E-15 ENI (W)
C 1972 C 1962 C 1952 C 1942 C 1911 C 1922 C 1982
1E-16
Quantumefficiency (%)
C 19 4 3C 19 4 4 10 C 19 8 3
1E-17
1E-18
1 00 1 C 19 73 C 19 72 C 19 6 2 C 13 2 2 C 19 2 1 0. 1 10 0 C 19 11 200 300 400 50 0 C 19 4 2 600 70 0 800 900
Gain
1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9 1,E+09 1,E+08
200
300
400
500
600
700
800
900
W avel ength ( nm )
Current Amplification/vs Control Voltage
C 19 52 C 19 8 2
1,E+07
Wavelength (nm )
C.