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MH982 Dataheets PDF



Part Number MH982
Manufacturers PerkinElmer
Logo PerkinElmer
Description Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply
Datasheet MH982 DatasheetMH982 Datasheet (PDF)

D A T A S H E E T Lighting Imaging Telecom Sensors Channel Photomultipliers and Modules MH Series CPM Modules Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply Description The Channel Photomultiplier module MH 900 series is designed for an easy to use application for both photoncounting and dc operating modes. It contains an adjustable high voltage supply and a Channel Photomultiplier of the C900 series. The module also offers the possibility to apply.

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D A T A S H E E T Lighting Imaging Telecom Sensors Channel Photomultipliers and Modules MH Series CPM Modules Ultra High Sensitivity Channel Photomultiplier Head Including High Voltage Power Supply Description The Channel Photomultiplier module MH 900 series is designed for an easy to use application for both photoncounting and dc operating modes. It contains an adjustable high voltage supply and a Channel Photomultiplier of the C900 series. The module also offers the possibility to apply an external gate function for time correlated photon counting or active quenching control (only bialkali types). Strong variations in light levels are possible due to the high dynamic range of the installed CPM. The exceptional low noise and high sensitivity facilitates detection of extremely weak light levels. Features · High dynamic range · No cooling required · Very high stability in noise level · Adjustable gain · High stability over time · Gateable CPM input for time resolved measurements · Extremely fast high-light recovery times · Rugged and compact design · 5 volts operating voltage · Monitor voltage output . w w w. p e r k i n e l m e r. c o m / o p t o Technical Specifications MH 900 Series 1/3” CPM Module *) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics Equivalent Noise Input 1E-14 5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C * for long term operation: max average anode -20 to 50 °C current of <100 nA is recommended approx. 225 g 1E-15 Spectral response ENI (W) C 972 C 962 C 952 C 942 1E-17 10 0 1E-16 C 982 Quantumefficiency (%) C 943 C 944 10 C 983 1E-18 C 911 C 922 100 200 300 400 500 600 700 800 900 Wavelength (nm) Current Amplification/vs Control Voltage 1,E+09 1 C 9 73 C 9 72 1,E+08 C 962 C 922 C 982 0. 1 10 0 C 9 11 200 300 400 50 0 C 942 600 70 0 800 900 Gain 1,E+07 C 921 C 9 52 1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9 Wavelength (nm ) Control Voltage / V Technical Specifications MH 1300 Series 1/2” CPM Module *) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics Equi val entN oi se I nput 1 E1 4 5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C * for long term operation: max average anode -20 to 50 °C current of <100 nA is recommended approx. 290 g Spectral response ENI (W) 10 0 1 E1 5 C 13 6 2 1 E1 6 C 13 4 2 1 E1 7 C 13 2 2 C 13 11 C 13 8 2 C 13 52 C 13 72 C 13 4 3 C 13 4 4 Quantumefficiency (%) 10 C 13 8 3 1 E1 8 1 00 300 500 700 900 W avel engt h( nm ) C 13 7 3 1 C 13 6 2 C 13 2 2 C 13 2 1 C 13 8 2 0 .1 10 0 200 300 400 500 600 700 800 900 C 13 11 C 13 4 2 C 13 5 2 C 13 7 2 1,E+09 1,E+08 1,E+07 Current Amplification/vs Control Voltage Gain 1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9 Wavelength (nm ) Control Voltage / V Technical Specifications MH 1900 Series 3/4” CPM Module *) Additional models on request Operating Conditions Input voltage Input current Max. linear anode current Max. anode current* Gating input Monitor voltage out High voltage adjust Operating temperature Storage temperature Weight: Performance Characteristics Equivalent Noise Input 1E-14 5 V to +5.5 V DC < 200 mA (DC linearity limit) 10% of bias current 10 µA (max. 30 sec.) TTL, active high (switches cathode potential higher than channel entrance potential) |VChannelEntrance|/1000 by internal potentiometer, |0 ... 2900 V| VChannelEntrance by external control voltage (0 ... 3 V),via OpAmp circuit 5 to 40 °C -20 to 50 °C * for long term operation: max average anode approx. 370 g current of <100 nA is recommended Spectral response 10 0 1E-15 ENI (W) C 1972 C 1962 C 1952 C 1942 C 1911 C 1922 C 1982 1E-16 Quantumefficiency (%) C 19 4 3C 19 4 4 10 C 19 8 3 1E-17 1E-18 1 00 1 C 19 73 C 19 72 C 19 6 2 C 13 2 2 C 19 2 1 0. 1 10 0 C 19 11 200 300 400 50 0 C 19 4 2 600 70 0 800 900 Gain 1,E+06 1,E+05 1,E+04 1,E+03 1,E+02 0,9 1,4 1,9 2,4 2,9 1,E+09 1,E+08 200 300 400 500 600 700 800 900 W avel ength ( nm ) Current Amplification/vs Control Voltage C 19 52 C 19 8 2 1,E+07 Wavelength (nm ) C.


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