MHL21336

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL21336/D The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. Third Order Intercept: 45 dBm Typ Power Gain: 31 dB Typ (@ f = 2140 MHz) Excellent Phase Linearity and Group Delay Characteristics Ideal for Feedforward Base Station Applications MHL21336 2110–2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AP–02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +5 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR (f = 2140 MHz) (f = 2110–2170 MHz) (f = 2140 MHz) (f = 2110–2170 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin ITO NF Min — 30 — 34 — 44 — Typ 500 31 0.15 35 1.2:1 45 4.5 Max 525 32 0.4 — 1.5:1 — 5 dBm dB Unit mA dB dB dBm Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) Noise Figure (f = 2170 MHz) REV 3 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2...