MHW1224

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MHW1134/D Low Distortion Wideband Amplifiers . . . designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid–split and high–split 2–way cable TV systems. Features all gold metallization system. Guaranteed Broadband Power Gain @ f = 5.0– 200 MHz Guaranteed Broadband Noise Figure @ f = 5.0– 175 MHz Superior Gain, Return Loss and DC Current Stability with Temperature All Gold Metallization All Ion–Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT’s Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions Transformers Designed to Insure Good Low Frequency Gain Stability versus Temperature MHW1134 MHW1184 MHW1224 MHW1244 13.0 dB 18.0 dB 22.0 dB 24.0 dB 5.0 – 200 MHz CATV HIGH–SPLIT REVERSE AMPLIFIERS CASE 714–06, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value + 65 + 28 – 20 to +100 – 40 to +100 Unit dBmV Vdc °C °C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30°C, 75 W system) Characteristic Power Gain @ 10 MHz Frequency Range (Response/Return Loss) Note 1 Cable Slope Equivalent (5.0– 200 MHz) Gain Flatness (5.0 – 200 MHz) Input/Output Return Loss (5.0– 200 MHz) Note 1 Cross Modulation Distortion @ +50 dBmV per ch. 12–Channel FLAT (5.0 – 120 MHz) 2...