MHW2727-3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW2727/D The RF Line UHF Silicon FET Power Amplifiers Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. Specified 7.5 Volt Characteristics: RF Input Power: 20 mW (13 dBm) RF Output Power: 7 W Minimum Gain (Vcont = 7 V): 25.5 dB Harmonics: – 35 dBc Max @ 2.0 fo 350 – 360 MHz – 40 dBc Max @ 2.0 fo 360 – 400 MHz Epoxy Glass PCB Construction Gives Consistent Performance and Reliability 50 Ω Input/Output Impedances Guaranteed Stability and Ruggedness MHW2727-3 7 W, 350 – 400 MHZ UHF POWER AMPLIFIERS CASE 420AC–01 , STYLE 1 MAXIMUM RATINGS (Flange Temperature = 25°C) Rating DC Supply Voltage (Pins 3, 4) DC Control Voltage (Pin 2) RF Input Power RF Output Power (VDD1, 2 = 9 V) Operating Case Temperature Range Storage Temperature Range Symbol VDD1, 2 Vcont Pin Pout TC Tstg Value 9 9 40 9 – 30 to +100 – 30 to +100 Unit Vdc Vdc mW W °C °C MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MHW2727–3 1 ELECTRICAL CHARACTERISTICS (VDD1, VDD2 = 7.5 Vdc (Pins 3, 4); TC = +25°C, 50 Ω system unless otherwise noted) Characteristic Frequency Range Control Voltage (Pout = 7 W; Pin = 20 mW) (1) Quiescent Current (VDD1, VDD2 = 7.5 Vdc; Pin = 0 mW, Vcont = 0 Vdc) Power Gain (Pout = 7 W) (1) Efficiency (Pout = 7 W; Pin = 20 mW) (1) Harmonics (Pout = 7 W; Pin = 20 mW) (1) Input VSWR (Pout = 7 W; Pin = 20 mW, 50 Ω Ref.) (1) Control Current (VDD1, V...