MHW6182-6

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHW6182–6/D The RF Line 600 MHz CATV Amplifier Module This module is designed specifically for 600 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. Specified for 87–Channel Performance Broadband Power Gain — @ f = 40– 600 MHz Gp = 17.6 dB (Min) @ 50 MHz Gp = 18.2 dB (Min) @ 600 MHz Broadband Noise Figure @ 600 MHz NF = 6 dB (Max) Superior Gain, Return Loss and DC Current Stability with Temperature All Gold Metallization 7 GHz Ion–Implanted Transistors MHW6182-6 5TH GENERATION 18 dB GAIN 600 MHz 87–CHANNEL CATV INPUT/OUTPUT TRUNK AMPLIFIERS ABSOLUTE MAXIMUM RATINGS Rating RF Voltage Input DC Supply Voltage Operating Case Temperature Range Storage Temperature Range Symbol Vin VCC TC Tstg Value + 60 + 28 – 20 to +100 – 40 to +100 Unit dBmV Vdc °C °C CASE 714–06, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30°C, 75 Ω system unless otherwise noted) Characteristic Frequency Range Power Gain Power Gain Slope Gain Flatness (Peak to Valley) Return Loss — Input/Output (Zo = 75 Ohms) Composite Second Order (Vout = + 44 dBmV/Ch) Cross Modulation Distortion (Vout = + 44 dBmV/Ch, Fm = 55 MHz) Composite Triple Beat (Vout = + 44 dBmV/Ch) Noise Figure DC Current (VDC = 24 Vdc, TC = 30°C) f = 50 MHz f = 600 MHz f = 40 – 600 MHz f = 40 – 600 MHz f = 40 – 600 MHz Symbol BW Gp Gp S — IRL/ORL CSO87 87–Channel FLAT XMD87 87–Channel...