32 W 890 to 915 MHz RF POWER AMPLIFIER
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW932/D
UHF Power Amplifier
. . . designed ...
Description
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW932/D
UHF Power Amplifier
. . . designed specifically for the Pan European digital 20 watt, GSM mobile radio. The MHW932 is capable of wide power range control, operates from a 12.5 volt supply and requires 100 mW of RF input power. Specified 12.5 Volt Characteristics: RF Input Power — 100 mW (20 dBm) RF Output Power — 32 W Minimum Gain — 25 dB Harmonics — – 35 dBc Max @ 2.0 fo New Biasing and Control Techniques Providing Dynamic Range and Control Circuit Bandwidth Ideal for GSM 50 Ohm Input / Output Impedances Guaranteed Stability and Ruggedness Test fixture circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MHW932
32 W 890 to 915 MHz RF POWER AMPLIFIER
CASE 301S–02, STYLE 1
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol VS VB Pin Pout TC Tstg Value 15.6 5.25 400 40 – 30 to +100 – 30 to +100 Unit Vdc Vdc mW W °C °C
ELECTRICAL CHARACTERISTICS
(VS1 = VS2 = VS3 = VS4 = 12.5 Vdc; VB = 5.0 Vdc, TC = + 25°C, 50 ohm system, unless otherwise noted) Characteristic Frequency Range Power Gain (Pout = 32 W) (1) Leakage Current (Pin = 0 mW, VB = 0 Vdc, VS1 = VS2 = VS3 = VS4 = 15.6 Vdc) Efficiency (Pout = 32 W) (1) Input VSWR (Pout = 32 W) (1) Harmonics (Pout = 32 W) (1) 2.0 fo 3.0 fo to 5.0 fo Symbol BW Gp IL η VSW...
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