4 Mbit (512 Kbit x 8) TIMEKEEPER SRAM
M48T512Y M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM
Not recommended for new design
Features
■ Inte...
Description
M48T512Y M48T512V
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM
Not recommended for new design
Features
■ Integrated ultra low power SRAM, real-time
clock, power-fail control circuit, battery, and
crystal
)■ BCD coded year, month, day, date, hours, t(sminutes, and seconds c■ Automatic power-fail chip deselect and WRITE uprotection rod■ WRITE protect voltages:
(VPFD = power-fail deselect voltage)
P– M48T512Y: VCC = 4.5 to 5.5 V; te4.2 V ≤ VPFD ≤ 4.5 V le– M48T512V: VCC = 3.0 to 3.6 V; so2.7 V ≤ VPFD ≤ 3.0 V b■ Conventional SRAM operation; unlimited OWRITE cycles -■ Software controlled clock calibration for high t(s)accuracy applications
■ 10 years of data retention and clock operation
ucin the absence of power d■ Pin and function compatible with industry rostandard 512 K x 8 SRAMS P■ Self-contained battery and crystal in DIP tepackage le■ RoHS compliant Obso– Lead-free second level interconnect
32 1
PMDIP32 module
June 2011
Doc ID 5747 R...
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