M48T512Y

M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal )■ BCD coded year, month, day, date, hours, t(sminutes, and seconds c■ Automatic power-fail chip deselect and WRITE uprotection rod■ WRITE protect voltages: (VPFD = power-fail deselect voltage) P– M48T512Y: VCC = 4.5 to 5.5 V; te4.2 V ≤ VPFD ≤ 4.5 V le– M48T512V: VCC = 3.0 to 3.6 V; so2.7 V ≤ VPFD ≤ 3.0 V b■ Conventional SRAM operation; unlimited OWRITE cycles -■ Software controlled clock calibration for high t(s)accuracy applications ■ 10 years of data retention and clock operation ucin the absence of power d■ Pin and function compatible with industry rostandard 512 K x 8 SRAMS P■ Self-contained battery and crystal in DIP tepackage le■ RoHS compliant Obso– Lead-free second level interconnect 32 1 PMDIP32 module June 2011 Doc ID 5747 R...