T1400TA18A

WESTCODE (capsule type) Absolute Maximum Ratings VOLTAGE RATINGS VCES VGES Collector – emitter voltage (Note 1) Peak gate – emitter voltage (Note 1) Date:- 10 May, 2001 Data Sheet Issue:- 1 Insulated Gate Bi-polar Transistor Type T1400TA18A MAXIMUM LIMITS 1800 ±20 UNITS V V RATINGS IC ICRM IF IFRM PMAX Tj Tstg DC – Collector current, IGBT (Note 2) Repetitive peak collector current, tp=1ms, IGBT (Note 2) DC – Forward current, Diode Repetitive peak forward current, tp=1ms, Diode Maximum power dissipation, IGBT Operating temperature range (Note 3) Storage temperature range (Note 3) MAXIMUM LIMITS 1400 2800 1400 2800 6.6 -60 to +150 -60 to +150 UNITS A A A A kW °C °C Notes: 1) Unless otherwise indicated Tj = 125ºC 2) TC = 90°C 3) For operation below –40°C or above 125°C please contact factory Introduction This rating report represents the outline specification for an Insulated gate bi-polar transistor (IGBT) housed in a 75mm boss diameter hermetic cold weld capsule. Data Sheet T1400TA18A Issue 1 Page 1 of 14 May, 2001 WESTCODE Positive development in power electronics Characteristics PARAMETER IGBT Characteristics VCE(sat) Vo rs VGE(TH) ICES IGES Cies td(on) tr(I) ton Qg(on) Eon td(off) tf Qg(off) Eoff Collector – emitter saturation voltage Threshold voltage Slope resistance Gate threshold voltage Collector – emitter cut-off current Gate leakage current Input capacitance Turn-on delay time Rise time Turn-on time Turn-on gate charge Turn-on energy Turn-off delay time F...