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MCR8DSN

Motorola

Silicon Controlled Rectifiers

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR8DSM/D Silicon Controlled Rectifiers Reverse Blocking...


Motorola

MCR8DSN

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCR8DSM/D Silicon Controlled Rectifiers Reverse Blocking Thyristors Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 G ORDERING INFORMATION To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR8DSN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MCR8DSNT4 To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MCR8DSN–1 A MCR8DSM MCR8DSN Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. SCRs 8.0 AMPERES RMS 600 thru 800 VOLTS A K K A G CASE 369A–13 STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C, RGK = 1.0 KW) On–State RMS Current (All Conduction Angles; TC = 90°C) Average On–State Current (All Conduction Angles; TC = 90°C) Peak Non–Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 90°C) Average Gate Power (t = 8.3 msec, TC = 90°C) Peak Gate Current (Pulse Width ≤ 10 msec...




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