MCTG35P60F1

Semiconductor MCTG35P60F1 35A, 600V MOS Controlled Thyristor (MCT) Package JEDEC STYLE TO-247 o April 1999 PROC WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB Features 35A, -600V VTM = -1.3V(Maximum) at I = 35A and +150 C 800A Surge Current Capability 800A/µs di/dt Capability MOS Insulated Gate Control 50A Gate Turn-Off Capability at +150oC A K G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTG35P60F1 PACKAGE TO-247 BRAND M35P60F1 K Symbol G A NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTG35P60F1 -600 +5 60 35 800 50 ±20 ±25 See Figure 11 800 178 1.43 -55 to +150 260 UNITS V V A A A A V V A/µs W W/oC oC oC Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM ...