MCTV75P60E1

Semiconductor April 1999 PRO CE IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O MCTV75P60E1, MCTA75P60E1 JEDEC STYLE TO-247 5-LEAD ANODE ANODE CATHODE GATE RETURN GATE 75A, 600V P-Type MOS Controlled Thyristor (MCT) Package Features 75A, -600V VTM = -1.3V(Maximum) at I = 75A and +150oC 2000A Surge Current Capability 2000A/µs di/dt Capability MOS Insulated Gate Control 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTV75P60E1 MCTA75P60E1 PACKAGE TO-247 MO-093AA BRAND MV75P60E1 MA75P60E1 JEDEC MO-093AA (5-LEAD TO-218) ANODE ANODE CATHODE GATE RETURN GATE Symbol G A K NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV75P60E1 MCTA75P60E1 UNITS V V A A A A V V A/µs W W/oC oC oC Peak Off-State Voltage ...