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MDD312-12N1 Dataheets PDF



Part Number MDD312-12N1
Manufacturers IXYS
Logo IXYS
Description Standard Rectifier Module
Datasheet MDD312-12N1 DatasheetMDD312-12N1 Datasheet (PDF)

Standard Rectifier Module Phase leg Part number MDD312-12N1 2 13 MDD312-12N1 VRRM I FAV VF = 2x 1200 V = 310 A = 1.03 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC .

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Standard Rectifier Module Phase leg Part number MDD312-12N1 2 13 MDD312-12N1 VRRM I FAV VF = 2x 1200 V = 310 A = 1.03 V Backside: isolated Features / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors Package: Y1 ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204j Rectifier Symbol VRSM VRRM IR VF I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 1200 V VR = 1200 V forward voltage drop IF = 300 A IF = 600 A IF = 300 A IF = 600 A average forward current TC = 100°C RMS forward current 180° sine d = 0.5 threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 400 V; f = 1 MHz MDD312-12N1 TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 125 °C TVJ = 150°C TVJ = 150°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C Ratings min. typ. max. Unit 1300 V 1200 V 500 µA 30 mA 1.13 V 1.33 V 1.03 V 1.29 V 310 A 520 A 0.80 V 0.6 mΩ 0.12 K/W 0.04 K/W 1040 W 10.8 kA 11.7 kA 9.18 kA 9.92 kA 583.2 kA²s 566.1 kA²s 421.4 kA²s 409.0 kA²s 381 pF IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204j MDD312-12N1 Package Y1 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature Conditions per terminal MD M T d Spp/App d Spb/Apb V ISOL mounting torque terminal torque creepage distance on surface | striking distance through air terminal to terminal terminal to backside isolation voltage t = 1 second t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA Ratings min. typ. max. Unit 600 A -40 150 °C -40 125 °C -40 125 °C 680 g 4.5 7 Nm 11 13 Nm 16.0 mm 16.0 mm 3600 V 3000 V Production Index (PI) Date Code (DC) yywwAA Part Number Lot.No: xxxxxx Circuit Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Ordering Standard Ordering Number MDD312-12N1 Marking on Product MDD312-12N1 Delivery Mode Box Quantity Code No. 3 463426 Similar Part MDD312-14N1 MDD312-16N1 MDD312-18N1 MDD312-20N1 MDD312-22N1 Package Y1-CU Y1-CU Y1-CU Y1-CU Y1-CU Voltage class 1400 1600 1800 2000 2200 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.8 0.4 * on die level T VJ = 150°C V mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204j Outlines Y1 3x M8 MDD312-12N1 15 ±1 2 +0 -1,4 45 67 43 38 50 49 +0 -1,9 52 32 10 18 20 22.5 35 28.5 1 2 6.2 80 92 115 3 2 13 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191204j MDD312-12N1 Rectifier 10000 8000 IFSM 6000 [A] 4000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 106 VR = 0 V I2t [A2s] TVJ = 45°C TVJ = 150°C 500 400 IFAVM 300 [A] 200 100 DC 180 ° sin 120 ° 60 ° 30 ° 2000 0.01 0.1 1 t [s] Fig. 1 Surge overload current IFSM: Crest value, t: duration 105 1 10 t [ms] Fig. 2 I2t versus time (1-10 ms) 0 0 25 50 75 100 125 150 TC [°C] Fig. 3 Maximum forward current at case temperature 600 500 400 Ptot 300 [W] 200 100 DC 180 ° sin 120 °.


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