Document
Standard Rectifier Module
Phase leg
Part number
MDD312-12N1
2 13
MDD312-12N1
VRRM I FAV VF
= 2x 1200 V = 310 A = 1.03 V
Backside: isolated
Features / Advantages:
● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current
Applications:
● Diode for main rectification ● For single and three phase
bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors
Package: Y1
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper
internally DCB isolated ● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
Rectifier
Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1200 V
VR = 1200 V
forward voltage drop
IF = 300 A
IF = 600 A
IF = 300 A
IF = 600 A
average forward current
TC = 100°C
RMS forward current
180° sine
d = 0.5
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
MDD312-12N1
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C
Ratings
min. typ. max. Unit 1300 V 1200 V 500 µA 30 mA 1.13 V 1.33 V 1.03 V 1.29 V 310 A 520 A 0.80 V 0.6 mΩ 0.12 K/W
0.04 K/W 1040 W 10.8 kA 11.7 kA 9.18 kA 9.92 kA 583.2 kA²s 566.1 kA²s 421.4 kA²s 409.0 kA²s
381 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
MDD312-12N1
Package Y1
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min. typ. max. Unit 600 A
-40 150 °C
-40 125 °C
-40 125 °C
680 g
4.5 7 Nm
11 13 Nm
16.0 mm
16.0 mm
3600
V
3000
V
Production Index (PI)
Date Code (DC)
yywwAA
Part Number
Lot.No: xxxxxx
Circuit
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36)
Ordering Standard
Ordering Number MDD312-12N1
Marking on Product MDD312-12N1
Delivery Mode Box
Quantity Code No. 3 463426
Similar Part MDD312-14N1 MDD312-16N1 MDD312-18N1 MDD312-20N1
MDD312-22N1
Package Y1-CU Y1-CU Y1-CU Y1-CU
Y1-CU
Voltage class 1400 1600 1800 2000
2200
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0.8 0.4
* on die level
T VJ = 150°C
V mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
Outlines Y1
3x M8
MDD312-12N1
15 ±1
2
+0 -1,4
45 67
43 38 50
49
+0 -1,9
52
32
10
18
20 22.5
35
28.5
1
2
6.2 80
92 115
3
2 13
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204j
MDD312-12N1
Rectifier
10000
8000
IFSM 6000
[A] 4000
50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C
106 VR = 0 V
I2t [A2s]
TVJ = 45°C TVJ = 150°C
500
400 IFAVM
300 [A]
200
100
DC 180 ° sin 120 ° 60 ° 30 °
2000 0.01
0.1
1
t [s] Fig. 1 Surge overload current
IFSM: Crest value, t: duration
105 1
10
t [ms] Fig. 2 I2t versus time (1-10 ms)
0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Maximum forward current
at case temperature
600
500
400 Ptot
300 [W]
200
100
DC 180 ° sin 120 °.