MDI300-12A4

MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 330 A VCES = 1200 V VCE(sat) typ. = 2.2 V MID 3 MDI 3 1 2 3 11 10 9 8 8 9 1 1 8 9 1 11 10 2 11 10 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 3.3 W, non repetitive VGE = ±15 V, TJ = 125°C, RG = 3.3 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 330 220 440 10 ICM = 400 VCEK < VCES 1380 150 -40 ... +150 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 V V V V A A A ms A Advantages W q Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q °C °C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits Typical Applications q ...