DatasheetsPDF.com

MF34 Dataheets PDF



Part Number MF34
Manufacturers Dynex
Logo Dynex
Description Fast Recovery Diode
Datasheet MF34 DatasheetMF34 Datasheet (PDF)

MF34 MF34 Fast Recovery Diode Replaces March 1998 version, DS4624-2.1 DS4624-3.0 January 2000 APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications KEY PARAMETERS VRRM 1600V IF(AV) 40A IFSM 400A Qr 25µC trr 0.25ns FEATURES s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 Conditions MF34 - 1600 MF34 -1400 MF34 - 1200 MF34.

  MF34   MF34


Document
MF34 MF34 Fast Recovery Diode Replaces March 1998 version, DS4624-2.1 DS4624-3.0 January 2000 APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications KEY PARAMETERS VRRM 1600V IF(AV) 40A IFSM 400A Qr 25µC trr 0.25ns FEATURES s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 Conditions MF34 - 1600 MF34 -1400 MF34 - 1200 MF34 -1000 MF34 - 800 VRSM = VRRM +100V Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF34-1600R. Outline type code: DO5. See Package Details for further information. CURRENT RATINGS Symbol IF(AV) IF(RMS) IF Parameter Mean forward current RMS value Continuous (direct) forward current Conditions Half sine wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC Max. 40 63 50 Units A A A 1/7 MF34 SURGE RATINGS Symbol IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; with VRRM ≤ 10V, Tj = 125oC 10ms half sine; Tj = 125oC Max. 400 800 Units A A2s THERMAL AND MECHANICAL DATA Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 3.5Nm with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting torque -55 3.5 125 125 4.0 o Conditions Min. - Max. 0.8 0.2 125 Units o C/W o C/W o C C ˚C Nm CHARACTERISTICS Symbol VFM IRM trr QR VTO rT Forward voltage Peak reverse current Reverse recovery time Recovered charge Threshold voltage Slope resistance Parameter Conditions At 120A peak, Tcase = 25 C At VRRM, Tcase = 100oC IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C, VR = 100V IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C, VR = 100V At Tvj = 125 C At Tvj = 125 C o o o Typ. - Max. 2.0 5 250 25 1.2 7.0 Units V mA ns µC V mΩ 2/7 MF34 CURVES 200 Measured under pulse conditions Tj = 25˚C Instantaneous forward current - (A) 150 Tj = 125˚C 100 50 0 0 1.0 2.0 3.0 Instantaneous forward voltage - (V) Fig.1 Maximum (limit) forward characteristics Peak half sinewave forward current - (A) 400 Thermal impedance - ˚C/W Tcase = 125˚C VR = VRRM 1.00 d.c. 0.75 350 300 0.50 250 0.25 200 1 2 3 45 10 50 0 0.001 0.01 Cycles at 50Hz Duration Fig.2 Surge (non-repetitive) forward current vs time 0.1 Time - (s) 1.0 10 Fig.3 Maximum transient thermal impedance 3/7 MF34 500 Tcase = 65˚ Peak current - (A) 100 50 10 00 0 50 00 25 00 10 00 50 0 30 0 H 10 z 0 10 10 100 1000 Pulse width - (µs) Fig.4 Frequency curves - square waveform 10000 500 Tcase = 85˚ Peak current - (A) 100 50 10 00 0 50 00 25 00 10 00 50 0 30 0 H 10 z 0 10 10 100 1000 Pulse width - (µs) Fig.5 Frequency curves - square waveform 10000 500 0.05 Peak current - (A) 0.1 0.2 0.5 1.0 2.0J 100 10 10 100 1000 Pulse width - (µs) Fig.6 Energy per pulse - square waveform 10000 4/7 MF34 500 Tcase = 65˚ Peak current - (A) 100 10 00 0 50 00 25 00 10 00 50 0 30 0 50 H 10 z 0 10 10 100 1000 Pulse width - (µs) Fig.7 Frequency curves - sine waveform 10000 500 Tcase = 85˚ Peak current - (A) 100 10 00 50 25 00 10 00 50 30 50 H 10 z 0 0 00 0 0 10 10 100 1000 Pulse width - (µs) Fig.8 Frequency curves - sine waveform 10000 500 0.05 0.1 0.2 0.5 1.0 2.0J Peak current - (A) 100 10 10 100 1000 Pulse width - (µs) Fig.9 Energy per pulse - sine waveform 10000 5/7 MF34 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hex. 17.35mm AF max Ø4.0 23 11.5 Thread 1/4 in 28 UNF 2A Weight: 20g Package outline type code: DO5 ASSOCIATED PUBLICATIONS Title Calculating the junction temperature or power semiconductors Thyristor and diode measurement with a multi-meter Use of V , r on-state characteristic TO T Application Note Number AN4506 AN4853 AN5001 6/7 MF34 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This incl.


MF32M1-LZCATXX MF34 MF34-1200


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)