Document
MF34
MF34
Fast Recovery Diode
Replaces March 1998 version, DS4624-2.1 DS4624-3.0 January 2000
APPLICATIONS
s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications
KEY PARAMETERS VRRM 1600V IF(AV) 40A IFSM 400A Qr 25µC trr 0.25ns
FEATURES
s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics
VOLTAGE RATINGS
Type Number Repetitive Peak Reverse Voltage VRRM V 1600 1400 1200 1000 800 Conditions
MF34 - 1600 MF34 -1400 MF34 - 1200 MF34 -1000 MF34 - 800
VRSM = VRRM +100V
Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF34-1600R.
Outline type code: DO5. See Package Details for further information.
CURRENT RATINGS
Symbol IF(AV) IF(RMS) IF Parameter Mean forward current RMS value Continuous (direct) forward current Conditions Half sine wave resistive load, Tcase = 65oC Tcase = 65oC Tcase = 65oC Max. 40 63 50 Units A A A
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SURGE RATINGS
Symbol IFSM I2t Parameter Surge (non-repetitive) forward current I2t for fusing Conditions 10ms half sine; with VRRM ≤ 10V, Tj = 125oC 10ms half sine; Tj = 125oC Max. 400 800 Units A A2s
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 3.5Nm with mounting compound Forward (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Mounting torque -55 3.5 125 125 4.0
o
Conditions
Min. -
Max. 0.8 0.2 125
Units
o
C/W
o
C/W
o
C C
˚C Nm
CHARACTERISTICS
Symbol VFM IRM trr QR VTO rT Forward voltage Peak reverse current Reverse recovery time Recovered charge Threshold voltage Slope resistance Parameter Conditions At 120A peak, Tcase = 25 C At VRRM, Tcase = 100oC IF = 1A, diRR/dt = 25A/µs, Tcase = 25˚C, VR = 100V IF = 50A, diRR/dt = 50A/µs, Tcase = 25˚C, VR = 100V At Tvj = 125 C At Tvj = 125 C
o o o
Typ. -
Max. 2.0 5 250 25 1.2 7.0
Units V mA
ns
µC V mΩ
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CURVES
200
Measured under pulse conditions Tj = 25˚C
Instantaneous forward current - (A)
150
Tj = 125˚C 100
50
0
0
1.0 2.0 3.0 Instantaneous forward voltage - (V)
Fig.1 Maximum (limit) forward characteristics
Peak half sinewave forward current - (A)
400
Thermal impedance - ˚C/W
Tcase = 125˚C VR = VRRM
1.00 d.c. 0.75
350
300
0.50
250
0.25
200
1
2
3 45
10
50
0 0.001
0.01
Cycles at 50Hz Duration
Fig.2 Surge (non-repetitive) forward current vs time
0.1 Time - (s)
1.0
10
Fig.3 Maximum transient thermal impedance
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MF34
500
Tcase = 65˚
Peak current - (A)
100
50 10 00 0 50 00 25 00 10 00 50 0 30 0 H 10 z 0
10 10
100 1000 Pulse width - (µs)
Fig.4 Frequency curves - square waveform
10000
500
Tcase = 85˚
Peak current - (A)
100
50 10 00 0 50 00 25 00 10 00 50 0 30 0
H 10 z 0
10 10
100 1000 Pulse width - (µs)
Fig.5 Frequency curves - square waveform
10000
500 0.05
Peak current - (A)
0.1
0.2
0.5
1.0
2.0J
100
10 10
100 1000 Pulse width - (µs)
Fig.6 Energy per pulse - square waveform
10000
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500
Tcase = 65˚
Peak current - (A)
100
10 00 0 50 00 25 00 10 00 50 0 30 0
50 H 10 z 0
10 10
100 1000 Pulse width - (µs)
Fig.7 Frequency curves - sine waveform
10000
500
Tcase = 85˚
Peak current - (A)
100
10 00 50 25 00 10 00 50 30 50 H 10 z 0
0
00
0
0
10 10
100 1000 Pulse width - (µs)
Fig.8 Frequency curves - sine waveform
10000
500 0.05 0.1 0.2 0.5 1.0 2.0J
Peak current - (A)
100
10 10
100 1000 Pulse width - (µs)
Fig.9 Energy per pulse - sine waveform
10000
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MF34
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hex. 17.35mm AF max
Ø4.0
23
11.5
Thread 1/4 in 28 UNF 2A Weight: 20g
Package outline type code: DO5
ASSOCIATED PUBLICATIONS
Title Calculating the junction temperature or power semiconductors Thyristor and diode measurement with a multi-meter Use of V , r on-state characteristic
TO T
Application Note Number AN4506 AN4853 AN5001
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This incl.