MG100J1ZS40

TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 High Power Switching Applications Motor Control Applications MG100J1ZS40 Unit: mm l High input impedance l High spee : tf = 0.35µs (max) trr = 0.15µs (max) l Low saturation voltage : VCE (sat) = 3.5V (max) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Reverse voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) JEDEC JEITA TOSHIBA Weight: 202g Symbol VCES VGES VR IC ICP IF IFM PC Tj Tstg VIsol ― Rating 600 ±20 600 100 200 100 200 400 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V V A A W °C °C V N·m ― ― 2-94D2A 1 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Collector-emitter breakdown voltage Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Reverse current Forward voltage Reverse recovery time Thermal resistance Symbol Test Condition IGES ICES V(BR) CES VGE (off) VCE (sat) Cies tr ton tf toff IR VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 600V, VGE = 0 IC = 10mA, VGE = 0 IC = 100mA , VCE = 5A IC = 100A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz VR = 600V IF =...