N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J2YS50
High Power Switching Applications Motor Control Applications
MG10...
Description
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J2YS50
High Power Switching Applications Motor Control Applications
MG100J2YS50
Unit: mm
l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A)
trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage
: VCE (sat)=2.70V (Max) (IC=100A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc=25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg
VIsol
―
JEDEC EIAJ TOSHIBA
Weight: 202g (Typ.)
Rating
600 ±20 100 200 100 200 450 150 −40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
A
A
W °C °C V N·m
― ― 2-94D1A
000707EAA2
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing yo...
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