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MG100Q2YS40 Dataheets PDF



Part Number MG100Q2YS40
Manufacturers Toshiba
Logo Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Datasheet MG100Q2YS40 DatasheetMG100Q2YS40 Datasheet (PDF)

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter.

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TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS40 High Power Switching applications Motor Control Applications MG100Q2YS40 Unit: mm l High input impedance l High speed : tf = 0.5µs (Max) trr = 0.5µs (Max) l Low saturation voltage : VCE (sat) = 4.0V (Max) l Enhancement-mode l Includes a complete half bridge in one package. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 240g ― ― 2-108A2A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 100 200 100 200 670 150 −40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A A W °C °C V N·m 1 2001-04-16 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Test Condition VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 100mA ,VCE = 5V IC = 100A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz IF = 100A, VGE = 0 IF = 100A, VGE = −10V di / dt = 200A / µs Transistor Diode MG100Q2YS40 Min Typ. Max Unit ― ― ±10 ― ― 1.0 3.0 ― 6.0 ― 3.0 4.0 ― 12000 ― ― 0.3 0.6 ― 0.4 0.8 ― 0.2 0.5 ― 0.8 1.5 ― 2.0 3.0 µA mA V V pF µs V ― 0.25 0.5 µs ― ― 0.19 °C / W ― ― 0.5 2 2001-04-16 MG100Q2YS40 3 2001-04-16 MG100Q2YS40 4 2001-04-16 MG100Q2YS40 5 2001-04-16 MG100Q2YS40 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor wa.


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