MG1200FXF1US51

MG1200FXF1US51 Preliminary TOSHIBA GTR Module Silicon N-Channel IGBT MG1200FXF1US51 High Power Switching Applications Motor Control Applications · · · High input impedance Enhancement mode Electrodes are isolated from case. Equivalent Circuit C G E E E E C C C Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol ¾ Rating 3300 ±20 1200 2400 10 -40~125 -40~125 6000 (AC 1 min) 2/7 Nm 4 Unit V V A A kA °C °C V Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting Caution: MG1200FXF1US51 has no short-circuit capability. 1 2001-09-05 MG1200FXF1US51 Electrical Characteristics (Tvj = 125°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Forward voltage of diode Reverse recovery charge Peak reverse recovery current tf toff VF Qrr Irr Symbol IGES ICES VGE (off) VCE (sat) Cies tr ton Test Condition VGE = ±20 V, VCE = 0 V VCE = 3300 V, VGE = 0 V VCE = 5 V, IC = 1.2 A IC = 1200 A, VGE = 15 V VCE = 10 V, VGE = 0 V, f = 100 kHz VCC = 1800 V, IC = 1200 A, VGG = ±15 V, CGE = 0.1 mF, RG (on)/(off) = 3.9/3.3 W (dic/dt (on) ~ - 4900 A/ms) (Inductive load, Ls ~ - 160 nH) IF = 1200 A, VGE = 0 V IF = 1200 A, VGG = -15 V, d...