DatasheetsPDF.com

MG1200V1US51 Dataheets PDF



Part Number MG1200V1US51
Manufacturers Toshiba
Logo Toshiba
Description TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Datasheet MG1200V1US51 DatasheetMG1200V1US51 Datasheet (PDF)

MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTICS Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal: M4/M8 Mounting ― RATING 1700 20 1200 2400 1200 2400 5560 −20~125 −40~125 5400 (.

  MG1200V1US51   MG1200V1US51


MG1200FXF1US51 MG1200V1US51 MG120V2YS40


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)