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MG200Q1US51

Toshiba

Silicon N Channel IGBT GTR Module


Description
TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (...



Toshiba

MG200Q1US51

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