Document
TOSHIBA GTR Module Silicon N Channel IGBT
MG200Q1ZS11
MG200Q1ZS11
High Power Switching Applications Motor Control Applications
Unit: mm
High input impedance High speed : tf = 1.0µs (Max.)
trr = 0.5µs (Max.) Low saturation voltage
: VCE (sat) = 2.7V (Max.) Enhancement-mode The electrodes are isolated from case
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 445g
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg VIsol ―
Rating
1200 ±20 200 400 200 400 1400 150 −40 ~ 125 2500 (AC 1 min.) 3/3
Unit V V
A
A
W °C °C V N·m
― ― 2-109B5A
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Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Collector-emitter voltage
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
IGES ICES VCES VGE (OFF) VCE (sat) Cies
tr ton tf toff VF
trr
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 1200V, VGE = 0
IC ≤ 4mA ,VCE = 0
(Note 1)
IC = 200mA ,VCE = 5V
IC = 200A, VGE = 15V
VCE = 10V, VGE = 0, f = 1MHz
― ― 1200 3.0 ― ― ―
―
―
―
IF = 200A, VGE = 0 IF = 200A, VGE = −10V di / dt = 300A / µs
― ―
Transistor
―
Diode
―
― ― ― ― 2.2 31000 0.3 0.4 0.6 1.2 2.0
±500 4 ― 6.0 2.7 ― 0.6 0.8 1.0 1.8 3.0
µA mA V V V pF
µs
V
0.25 0.5
µs
― 0.089 °C / W
― 0.25
Note 1: Do not apply the over rating voltage
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RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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