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MG25Q1BS11 Dataheets PDF



Part Number MG25Q1BS11
Manufacturers Toshiba
Logo Toshiba
Description Silicon N - Channel IGBT
Datasheet MG25Q1BS11 DatasheetMG25Q1BS11 Datasheet (PDF)

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGE.

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