MG25Q6ES42

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features 6 IGBTs are built into 1 package High speed: Low saturation voltage: Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current DC 1ms Forward Current DC 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque SYMBOL RATING VCES VGES IC ICP IF IFM 1200 ± 20 25 50 25 50 PC 200 Tj Tstg VIsol — 150 -40 ~ 125 2500 (AC 1 Minute) 3 UNIT V V A A W °C °C V N¥m MG25Q6ES42 Unit in mm TOSHIBA CORPORATION PW03810796 1/5 MG25Q6ES42 Equivalent Circuit Electrical Characteristics (Ta = 25°C) CHARACTERISTIC Gate Leakage Current Collector Cut-off Current Gate-Emitter Cut-off Voltage Collector-Emitter Saturation Voltage Input Capacitance Rise Time Switching Time Turn-on Time Fall Time SYMBOL TEST CONDITION IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf VGE = ± 20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 25mA, VCE = 5V IC = 25A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Turn-off Time toff Forward Voltage Reverse Recovery Time Thermal Resistance VF trr Rth (j - c) IF = 25A, VGE = 0 IF = 25A, VGE = -10V di/dt = 100A/µs Transistor Diode MIN. — — 3.0 — — — — — — — — — — TYP....