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74LVC1GU04 Dataheets PDF



Part Number 74LVC1GU04
Manufacturers NXP
Logo NXP
Description Inverter
Datasheet 74LVC1GU04 Datasheet74LVC1GU04 Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET 74LVC1GU04 Inverter Product specification Supersedes data of 2000 Dec 12 File under Integrated Circuits, IC24 2001 Apr 06 Philips Semiconductors Product specification Inverter FEATURES • Wide supply voltage range from 1.65 to 5.5 V • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 to 1.95 V) – JESD8-5 (2.3 to 2.7 V) – JESD8B/JESD36 (2.7 to 3.6 V). • ±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds .

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INTEGRATED CIRCUITS DATA SHEET 74LVC1GU04 Inverter Product specification Supersedes data of 2000 Dec 12 File under Integrated Circuits, IC24 2001 Apr 06 Philips Semiconductors Product specification Inverter FEATURES • Wide supply voltage range from 1.65 to 5.5 V • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 to 1.95 V) – JESD8-5 (2.3 to 2.7 V) – JESD8B/JESD36 (2.7 to 3.6 V). • ±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Input accepts voltages up to 5 V • SOT353 package. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 °C; tr = tf ≤ 2.5 ns. SYMBOL tPHL/tPLH PARAMETER propagation delay A to Y CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 kΩ VCC = 2.5 V; CL = 30 pF; RL = 500 Ω VCC = 3.3 V; CL = 50 pF; RL = 500 Ω VCC = 5.0 V; CL = 50 pF; RL = 500 Ω CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts. 2. The condition is VI = GND to VCC. FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level. 2001 Apr 06 2 OUTPUT Y H L input capacitance power dissipation capacitance per buffer notes 1 and 2 DESCRIPTION 74LVC1GU04 The 74LVC1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of this device in a mixed 3.3 and 5 V environment. The 74LVC1GU04 provides the inverting single state unbuffered function. TYPICAL 1.7 1.3 1.6 1.3 6 14.9 ns ns ns ns UNIT pF pF Philips Semiconductors Product specification Inverter ORDERING INFORMATION PACKAGE TYPE NUMBER 74LVC1GU04GW PINNING PIN 1 2 3 4 5 n.c. A GND Y VCC SYMBOL not connected data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE −40 to +85 °C PINS 5 PACKAGE SC-88A MATERIAL plastic 74LVC1GU04 CODE SOT353 MARKING VD handbook, halfpage n.c. 1 A 2 GND 3 MNA042 5 VCC handbook, halfpage U04 4 Y 2 A Y 4 MNA108 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage VCC VCC handbook, halfpage 2 1 4 A MNA109 100 Ω Y MNA636 Fig.3 IEE/IEC logic symbol. Fig.4 Logic diagram. 2001 Apr 06 3 Philips Semiconductors Product specification Inverter RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO Tamb tr, tf supply voltage input voltage output voltage operating ambient temperature input rise and fall times VCC = 1.65 to 2.7 V VCC = 2.7 to 5.5 V PARAMETER CONDITIONS MIN. 1.65 0 0 −40 0 0 74LVC1GU04 MAX. 5.5 5.5 VCC +85 20 10 UNIT V V V °C ns/V ns/V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 55 °C the value of PD derates linearly with 2.5 mW/K. supply voltage input diode current input voltage output diode current output voltage output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from −40 to +85 °C; note 2 VI < 0 note 1 VO > VCC or VO < 0 note 1 VO = 0 to VCC PARAMETER CONDITIONS MIN. −0.5 − −0.5 − −0.5 − − −65 − MAX. +6.5 −50 +6.5 ±50 VCC + 0.5 ±50 ±100 +150 200 UNIT V mA V mA V mA mA °C mW 2001 Apr 06 4 Philips Semiconductors Product specification Inverter DC CHARACTERISTICS At recommended operating conditions; voltage are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER VIH VIL VOL HIGH-level input voltage LOW-level input voltage LOW-level output voltage VI = VIH or VIL; IO = 100 µA VI = VIH or VIL; IO = 4 mA VI = VIH or VIL; IO = 8 mA VI = VIH or VIL; IO = 12 mA VI = VIH or VIL; IO = 24 mA VI = VIH or VIL; IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL; IO = −4 mA VI = VIH or VIL; IO = −8 mA VI = VIH or VIL; IO = −12 mA VI = VIH or VIL; IO = −24 mA VI = VIH or VIL; IO = −32 mA ILI ICC Note 1. All typical values are measured at VCC = 3.3 V and Tamb = 25 °C. input leakage current VI = 5.5 V or GND VCC (V) 1.65 to 5.5 1.65 to 5.5 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 1.65 2.3 2.7 3.0 4.5 3.6 5.5 MIN. 74LVC1GU04 Tamb (°C) −40 to +85 TYP.(1) − 0.25 × VCC 0.1 0.45 0.3 0.4 0.55 0.55 − − − − − − ±5 10 MAX. V V V V V V V V V V V V V V µA µA 0.75 × VCC − − − − − − − − VCC − 0.1 1.2 1.9 2.2 2.3 3.8 − − − − − − − − − − − − − − − ±0.1 0.1 UNIT VI = VIH or VIL; IO = −100 µA 1.65 to 5.5 quiescent supply VI = VCC or GND; IO = 0 current 2001 Apr 06 5 Philips Semiconductors Product specification Inverter AC CHARACTERISTICS GND = 0 V; tr = tf ≤ 2.0 ns. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS tPHL/tPLH propagation delay A to Y see Figs 5 and 8 VCC (V) 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5.


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