< High-power GaAs FET (small signal gain stage) >
MGF0905A
L & S BAND / 2.5W non - matched
DESCRIPTION
The MGF0905A, Ga...
< High-power GaAs FET (small signal gain stage) >
MGF0905A
L & S BAND / 2.5W non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel
schottky gate, is designed for use L & S band amplifiers.
FEATURES
High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency P.A.E=40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
for L & S band power amplifiers
QUALITY
GG
Packaging
4 inch Tray (25 pcs)
RECOMMENDED BIAS CONDITIONS
Vds=8V Ids=800mA Rg=100Ω
Absolute maximum ratings
Symbol
Parameter
VGDO VGSO ID IGR IGF PT*1 Tch Tstg
Gate to Drain Voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
*1:Tc=25°C
(Ta=25°C)
Ratings
-17 -17 3200 -10 21.5 14.3 175 -65 to +175
Unit
V V mA mA mA W °C °C
OUTLINE DRAWING
Uni t : m il lim eters
①
2MIN
4.4+0/-0.3
1.65 0.1
2MIN
② φ...
