MGF0909A

MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING Unit:millimeters FEATURES High output power P1dB=38dBm(TYP.) High power gain GLP=11dB(TYP.) High power added efficiency ηadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm @f=2.3GHz,Pin=20dBm 2 1 @f=2.3GHz 2 0.6±0.2 ø2.2 3 APPLICATION For UHF Band power amplifiers 5.0 QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=10V ID=1.3A Rg=100Ω Refer to Bias Procedure 9.0±0.2 14.0 1 GATE 2 SOURCE 3 DRAIN GF-7 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGSO VGDO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to source voltage Gate to drain voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 5.0 15 31.5 27.3 175 -65 to +175 *1 Unit V V A mA mA W ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol IDSS VGs(off) gm P1dB GLP ηadd Rth(ch-c) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz ∆Vf method Test conditions Min – -2 – 37 10 – – Limits Typ – – 1.5 38 11 45 – Max 5 -5 – – – – 5.5 Unit A V S dBm dB % ˚C/W *1:Channel to case *2:Pin=22dBm Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S B...