< High-power GaAs FET (small signal gain stage) >
MGF0910A
L & S BAND /6W non - matched
DESCRIPTION
The MGF0910A, GaAs ...
< High-power GaAs FET (small signal gain stage) >
MGF0910A
L & S BAND /6W non - matched
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel
schottky gate, is designed for use L & S band amplifiers.
FEATURES
Class A operation High output power
P1dB=38.0dBm(T.Y.P) @f=2.3GHz High power gain
GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency
P.A.E=45%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For L & S band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=1.3A Rg=100Ω
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Ratings
VGDO Gate to Source Voltage VGSO Gate to source voltage
-15 -15
ID Drain Current
5
IGR Reverse gate current
-15
IGF Forward gate current
31.5
PT*1 Total power dissipation
30
Tch Cannel temperature
175
Tstg Storage temperature
-65 to +175
*1:Tc=25°C
Unit
V V A mA mA W °C °C
OUTLINE DRAWING
Unit:millimeters
4 MIN
17.5
①
1...