MGF0910A

< High-power GaAs FET (small signal gain stage) > MGF0910A L & S BAND /6W non - matched DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers. FEATURES Class A operation High output power P1dB=38.0dBm(T.Y.P) @f=2.3GHz High power gain GLP=11.0dB(TYP.) @f=2.3GHz High power added efficiency P.A.E=45%(TYP.) @f=2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid APPLICATION For L & S band power amplifiers QUALITY IG RECOMMENDED BIAS CONDITIONS Vds=10V Ids=1.3A Rg=100Ω Absolute maximum ratings (Ta=25°C) Symbol Parameter Ratings VGDO Gate to Source Voltage VGSO Gate to source voltage -15 -15 ID Drain Current 5 IGR Reverse gate current -15 IGF Forward gate current 31.5 PT*1 Total power dissipation 30 Tch Cannel temperature 175 Tstg Storage temperature -65 to +175 *1:Tc=25°C Unit V V A mA mA W °C °C OUTLINE DRAWING Unit：millimeters 4 MIN 17.5 ① 1...