MGF0911A

MITSUBISHI SEMICONDUCTOR 〈GaAs FET〉 MGF0911A L, S BAND POWER GaAs FET DESCRIPTION The MGF0911A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. OUTLINE DRAWING 17.5 1 Unit:millimeters FEATURES Class A operation High output power P1dB=41dBm(TYP) High power gain GLP=11dB(TYP) High power added efficiency ηadd=40%(TYP) @2.3GHz,P1dB Hermetically sealed metal-ceramic package with ceramic lid @2.3GHz 2 1.0 @2.3GHz 2 3 2-R1.25 14.3 9.4 APPLICATION UHF band power amplifiers QUALITY GRADE IG 10.0 RECOMMENDED BIAS CONDITIONS VDS=10V ID=2.6A Rg=50Ω Refer to Bias Procedure 1 GATE 2 SOURCE(FLANGE) GF-21 3 DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 10 30 63 37.5 175 -65 to +175 *1 Unit V V A mA mA W ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol IDSS gm VGS(off) P1dB GLP ηadd Rth(ch-c) Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression VDS=3V,VGS=0V VDS=3V,ID=2.6A VDS=3V,ID=20mA Test conditions Min – – -2 40 VDS=10V,ID 2.6A,f=2.3GHz 10 – – Limits Typ – 3.0 – 41 11 40 – Max 10 – -5 – – – 4.0 Unit A S V dBm dB % ˚C/W Linear power gain *2 Power added efficiency at P1dB Thermal resistance *1 ∆Vf method *1:Chan...