MGF1601B

MITSUBISHI SEMICONDUCTOR GaAs FET MGF1601B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES High output power at 1dB gain compression P1dB=21.8dBm(TYP.) High linear power gain GLP=8dB(TYP.) @f=8GHz 0.5±0.15 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 3 QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=6V ID=100mA Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN GD-10 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID IGR IGF PT Tch Tstg *1:TC=25˚C Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature *1 Ratings -8 -8 250 -0.6 1.5 1.2 175 -65 to +175 Unit V V mA mA mA W ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol V(BR)GDO V(BR)GSO IGSS IDSS VGS(off) gm GLP P1dB Rth(ch-c) Parameter Test conditions Min -8 -8 – 150 -1.5 70 6 20.8 – Limits Typ – – – 200 – 90 8 21.8 – Max – – 20 250 -4.5 – – – 125 Unit V V µA mA V mS dB dBm ˚C/W Gate to drain breakdown voltage IG=-200µA Gate to source breakdown voltage IG=-200µA Gate to source leakage current VGS=-3V,VDS=0V VGS=0V,VD...