< High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W non - matched
DESCRIPTION
The MGF2407A, ...
< High-power GaAs FET (small signal gain stage) >
MGF2407A
S to Ku BAND / 0.28W non - matched
DESCRIPTION
The MGF2407A, power GaAs FET with an N-channel
schottky gate, is designed for use in S to Ku band amplifiers.
FEATURES
High output power Po=24.5dBm(TYP.) @f=14.5GHz
High linear power gain GLP=8.0dB(TYP.) @f=14.5GHz
High power added efficiency P.A.E.=30%(TYP.) @f=14.5GHz,P1dB
APPLICATION
S to Ku Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=75mA Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
VGDO VGSO ID IGR IGF PT*1 Tch Tstg
Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
*1:Tc=25C
Ratings
-15 -15 200 -0.6 2.5 1.5 175 -65 to +175
Unit
V V mA mA mA W C C
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