MGF2430A

< High-power GaAs FET (small signal gain stage) > MGF2430A L to Ku BAND / 1.1W non - matched DESCRIPTION The MGF2430A, GaAs FET with an N-channel schottky gate, is designed for L to Ku band amplifiers. FEATURES High output power P1dB=30.5dBm(T.Y.P) @f=14.5GHz High linear gain GLP=6.5dB(TYP.) @f=14.5GHz High power added efficiency P.A.E=27%(TYP.) @f=14.5GHz,P1dB Hermetically sealed metal package APPLICATION For L to Ku band power amplifiers QUALITY IG OUTLINE DRAWING RECOMMENDED BIAS CONDITIONS Vds=10V Ids=300mA Rg=500Ω Absolute maximum ratings Symbol Parameter VGDO Gate to Source Voltage VGSO Gate to source voltage IDSS Saturated drain current IGR Reverse gate current IGF Forward gate current PT*1 Total power dissipation Tch Cannel temperature Tstg Storage temperature *1:Tc=25°C (Ta=25°C) Ratings -15 -15 800 -2.4 10 5 175 -65 to +175 Unit V V mA mA mA W °C °C GF-17 Unit：millimeters ① GATE ② SOURCE ③ DRAIN Electrical ...