MGF4919G

MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures OUTLINE DRAWING 4.0±0.2 1.85±0.2 1 Unit:millimeters minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is mounted in the super 12 tape. 0.5±0.15 FEATURES Low noise figure @f=12GHz MGF4916G:NFmin.=0.80dB(MAX.) MGF4919G:NFmin.=0.50dB(MAX.) High associated gain Gs=12.0dB(MIN.) @f=12GHz 2 2 0.5±0.15 3 APPLICATION L to Ku band low noise amplifiers. ø1.8±0.2 QUALITY GRADE GG 1 GATE 2 SOURCE RECOMMENDED BIAS CONDITIONS VDS=2V,ID=10mA Refer to Bias Procedure 3 DRAIN GD-16 ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Total power dissipation Channel temperature Storage temperature Ratings -4 -4 60 50 125 -65 to +125 Unit V V mA mW ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol V(BR)GDO IGSS IDSS VGs(off) gm GS NFmin. Parameter Gate to drain breakdown voltage Gate to source leakage current Saturated drain current Gate to source cut-off voltage Transconductance Associated gain Minimum noise figure IG=-10µA VGS=-2V,VDS=0V VGS=0V,VDS=2V VDS=2V,ID=500µA VDS=2V,ID=10mA VDS=2V,ID=10mA f=12GHz MGF4916G MGF4919G Test conditions Min -3 – 15 -0.1 – 12.0 – – Lim...