June/2004
MITSUBISHI SEMICONDUCTOR
MGF4951A/MGF4952A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
Outline Drawing
FEATURES
Low noise figure
@ f=12GHz
MGF4951A : NFmin. = 0.40dB (Typ.)
MGF4952A : NFmin. = 0.60dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 12.0dB (Typ.)
APPLICATION
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not to be reproduced or disclosed without permission by Mitsubishi Electric
ORDERING INFORMATION
Tape & reel 3000pcs./reel
ABSOLUTE MAXIMUM RATINGS
Symbol VGDO VGSO
ID
Parameter Gate to drain voltage Gate to source voltage Drain current
PT Total power dissipation Tch Channel temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS
Synbol
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