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MGF4952A Dataheets PDF



Part Number MGF4952A
Manufacturers Mitsubishi
Logo Mitsubishi
Description SUPER LOW NOISE InGaAs HEMT
Datasheet MGF4952A DatasheetMGF4952A Datasheet (PDF)

June/2004 MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF4952A : NFmin. = 0.60dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 12.0.

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June/2004 MITSUBISHI SEMICONDUCTOR MGF4951A/MGF4952A SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) DESCRIPTION The MGF4951A/MGF4952A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF4952A : NFmin. = 0.60dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 12.0dB (Typ.) APPLICATION C to K band low noise amplifiers QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 3000pcs./reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID Parameter Gate to drain voltage Gate to source voltage Drain current PT Total power dissipation Tch Channel temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS Synbol .


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