MGF7124A

MITSUBISHI SEMICONDUCTOR GaAs MMIC MGF7124A 1.9GHz BAND AMPLIFIER MMIC DESCRIPTION MGF7124A is a monolithic microwave integrated circuit for use in 1.9GHz band power amplifiers. OUTLINE DRAWING Unit:millimeters 1 8 FEATURES High output power PO=26dBm,π/4DQPSK Small size 5.8×12.2×1.8mm Light weight Surface mount package Low supply voltage operation VD=4.8V Enable to control gain VGdual=0/-4V Pi 2 7 VG1 VGdual 3 6 VD1 NU 4 5 VG2 Po 8.4 12.2 VD2 APPLICATION Base-station of Japanese personal handyphone system(PHS) Pi VD1 VD2 GND : RF INPUT : 1st DRAIN BIAS : 2nd DRAIN BIAS : GND VG1 VG2 VGdual PO : 1st GATE BIAS : 2nd GATE BIAS : GAIN CONTROL : RF OUTPUT QUALITY GRADE IG GC-3 ABSOLUTE MAXIMUM RATINGS Symbol VD1,VD2 VG1,VG2, VGdual ID1,ID2,ID3 Pi TC(op) Tstg Parameter Drain voltage Gate voltage Drain current Input power Operating case temperature Storage temperature Ratings 5.5 -5.5 500 10 -20 to +90 -35 to +120 Unit V V mA dBm ˚C ˚C ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f VD GP IDt Gcon A.C.P (±600kHz) A.C.P (±900kHz) Note1: ZS=ZL=50Ω,IDt-bias=ID1+ID2=280mA Parameter Frequency Drain supply voltage Power gain Total drain current Gain control range Test conditions (Note1) PO=26dBm,f=1.9GHz,π/4DQPSK VGdual=0/-4V,PO=26dBm,f=1.9GHz PO=26dBm,f(ACP)=±600kHz, f=1.9GHz,π/4DQPSK PO=26dBm,f(ACP)=±900kHz, f=1.9GHz,π/4DQPSK Min 1.89 4.8 21 – 20 – – Limits Typ – 5.0 – 300 – – – Max 1.92 5.2 – – – -56 -62 Unit GHz V dB mA dB dBc dBc Adjacent channel...